diff options
| -rw-r--r-- | arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h | 8 | ||||
| -rw-r--r-- | arch/arm/mach-sunxi/dram_sun50i_h6.c | 82 |
2 files changed, 62 insertions, 28 deletions
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h index 54c47555566..0a1da023760 100644 --- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h +++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h @@ -9,6 +9,8 @@ #ifndef _SUNXI_DRAM_SUN50I_H6_H #define _SUNXI_DRAM_SUN50I_H6_H +#include <stdbool.h> + enum sunxi_dram_type { SUNXI_DRAM_TYPE_DDR3 = 3, SUNXI_DRAM_TYPE_DDR4, @@ -16,6 +18,11 @@ enum sunxi_dram_type { SUNXI_DRAM_TYPE_LPDDR3, }; +static inline bool sunxi_dram_is_lpddr(int type) +{ + return type >= SUNXI_DRAM_TYPE_LPDDR2; +} + /* * The following information is mainly retrieved by disassembly and some FPGA * test code of sun50iw3 platform. @@ -286,6 +293,7 @@ check_member(sunxi_mctl_phy_reg, dx[3].reserved_0xf0, 0xaf0); #define DCR_DDR3 (3 << 0) #define DCR_DDR4 (4 << 0) #define DCR_DDR8BANK BIT(3) +#define DCR_DDR2T BIT(28) /* * The delay parameters allow to allegedly specify delay times of some diff --git a/arch/arm/mach-sunxi/dram_sun50i_h6.c b/arch/arm/mach-sunxi/dram_sun50i_h6.c index 697b8af4ce8..17649ffbf9c 100644 --- a/arch/arm/mach-sunxi/dram_sun50i_h6.c +++ b/arch/arm/mach-sunxi/dram_sun50i_h6.c @@ -42,6 +42,7 @@ static void mctl_core_init(struct dram_para *para) mctl_com_init(para); switch (para->type) { case SUNXI_DRAM_TYPE_LPDDR3: + case SUNXI_DRAM_TYPE_DDR3: mctl_set_timing_params(para); break; default: @@ -284,14 +285,11 @@ static void mctl_com_init(struct dram_para *para) mctl_set_addrmap(para); setbits_le32(&mctl_com->cr, BIT(31)); - /* - * This address is magic; it's in SID memory area, but there's no - * known definition of it. - * On my Pine H64 board it has content 7. - */ - if (readl(0x03006100) == 7) + + /* The bonding ID seems to be always 7. */ + if (readl(SUNXI_SIDC_BASE + 0x100) == 7) /* bonding ID */ clrbits_le32(&mctl_com->cr, BIT(27)); - else if (readl(0x03006100) == 3) + else if (readl(SUNXI_SIDC_BASE + 0x100) == 3) setbits_le32(&mctl_com->cr, BIT(27)); if (para->clk > 408) @@ -302,22 +300,37 @@ static void mctl_com_init(struct dram_para *para) reg_val = 0x3f00; clrsetbits_le32(&mctl_com->unk_0x008, 0x3f00, reg_val); - /* TODO: half DQ, non-LPDDR3 types */ - writel(MSTR_DEVICETYPE_LPDDR3 | MSTR_BUSWIDTH_FULL | - MSTR_BURST_LENGTH(8) | MSTR_ACTIVE_RANKS(para->ranks) | - 0x80000000, &mctl_ctl->mstr); - writel(DCR_LPDDR3 | DCR_DDR8BANK | 0x400, &mctl_phy->dcr); + /* TODO: half DQ, DDR4 */ + reg_val = MSTR_BUSWIDTH_FULL | MSTR_BURST_LENGTH(8) | + MSTR_ACTIVE_RANKS(para->ranks); + if (para->type == SUNXI_DRAM_TYPE_LPDDR3) + reg_val |= MSTR_DEVICETYPE_LPDDR3; + if (para->type == SUNXI_DRAM_TYPE_DDR3) + reg_val |= MSTR_DEVICETYPE_DDR3 | MSTR_2TMODE; + writel(reg_val | BIT(31), &mctl_ctl->mstr); + + if (para->type == SUNXI_DRAM_TYPE_LPDDR3) + reg_val = DCR_LPDDR3 | DCR_DDR8BANK; + if (para->type == SUNXI_DRAM_TYPE_DDR3) + reg_val = DCR_DDR3 | DCR_DDR8BANK | DCR_DDR2T; + writel(reg_val | 0x400, &mctl_phy->dcr); if (para->ranks == 2) writel(0x0303, &mctl_ctl->odtmap); else writel(0x0201, &mctl_ctl->odtmap); - /* TODO: non-LPDDR3 types */ - tmp = para->clk * 7 / 2000; - reg_val = 0x0400; - reg_val |= (tmp + 7) << 24; - reg_val |= (((para->clk < 400) ? 3 : 4) - tmp) << 16; + /* TODO: DDR4 */ + if (para->type == SUNXI_DRAM_TYPE_LPDDR3) { + tmp = para->clk * 7 / 2000; + reg_val = 0x0400; + reg_val |= (tmp + 7) << 24; + reg_val |= (((para->clk < 400) ? 3 : 4) - tmp) << 16; + } else if (para->type == SUNXI_DRAM_TYPE_DDR3) { + reg_val = 0x06000400; /* TODO?: Use CL - CWL value in [7:0] */ + } else { + panic("Only (LP)DDR3 supported (type = %d)\n", para->type); + } writel(reg_val, &mctl_ctl->odtcfg); /* TODO: half DQ */ @@ -372,6 +385,9 @@ static void mctl_bit_delay_set(struct dram_para *para) setbits_le32(&mctl_phy->pgcr[0], BIT(26)); udelay(1); + if (para->type != SUNXI_DRAM_TYPE_LPDDR3) + return; + for (i = 1; i < 14; i++) { val = readl(&mctl_phy->acbdlr[i]); val += 0x0a0a0a0a; @@ -419,7 +435,8 @@ static void mctl_channel_init(struct dram_para *para) else clrsetbits_le32(&mctl_phy->dtcr[1], 0x30000, 0x10000); - clrbits_le32(&mctl_phy->dtcr[1], BIT(1)); + if (sunxi_dram_is_lpddr(para->type)) + clrbits_le32(&mctl_phy->dtcr[1], BIT(1)); if (para->ranks == 2) { writel(0x00010001, &mctl_phy->rankidr); writel(0x20000, &mctl_phy->odtcr); @@ -428,8 +445,11 @@ static void mctl_channel_init(struct dram_para *para) writel(0x10000, &mctl_phy->odtcr); } - /* TODO: non-LPDDR3 types */ - clrsetbits_le32(&mctl_phy->dtcr[0], 0xF0000000, 0x10000040); + /* set bits [3:0] to 1? 0 not valid in ZynqMP d/s */ + if (para->type == SUNXI_DRAM_TYPE_LPDDR3) + clrsetbits_le32(&mctl_phy->dtcr[0], 0xF0000000, 0x10000040); + else + clrsetbits_le32(&mctl_phy->dtcr[0], 0xF0000000, 0x10000000); if (para->clk <= 792) { if (para->clk <= 672) { if (para->clk <= 600) @@ -459,12 +479,13 @@ static void mctl_channel_init(struct dram_para *para) writel(0x06060606, &mctl_phy->acbdlr[i]); } - /* TODO: non-LPDDR3 types */ - mctl_phy_pir_init(PIR_ZCAL | PIR_DCAL | PIR_PHYRST | PIR_DRAMINIT | - PIR_QSGATE | PIR_RDDSKW | PIR_WRDSKW | PIR_RDEYE | - PIR_WREYE); + val = PIR_ZCAL | PIR_DCAL | PIR_PHYRST | PIR_DRAMINIT | PIR_QSGATE | + PIR_RDDSKW | PIR_WRDSKW | PIR_RDEYE | PIR_WREYE; + if (para->type == SUNXI_DRAM_TYPE_DDR3) + val |= PIR_DRAMRST | PIR_WL; + mctl_phy_pir_init(val); - /* TODO: non-LPDDR3 types */ + /* TODO: DDR4 types ? */ for (i = 0; i < 4; i++) writel(0x00000909, &mctl_phy->dx[i].gcr[5]); @@ -520,7 +541,8 @@ static void mctl_channel_init(struct dram_para *para) panic("Error while initializing DRAM PHY!\n"); } - clrsetbits_le32(&mctl_phy->dsgcr, 0xc0, 0x40); + if (sunxi_dram_is_lpddr(para->type)) + clrsetbits_le32(&mctl_phy->dsgcr, 0xc0, 0x40); clrbits_le32(&mctl_phy->pgcr[1], 0x40); clrbits_le32(&mctl_ctl->dfimisc, BIT(0)); writel(1, &mctl_ctl->swctl); @@ -589,11 +611,15 @@ unsigned long sunxi_dram_init(void) (struct sunxi_mctl_com_reg *)SUNXI_DRAM_COM_BASE; struct dram_para para = { .clk = CONFIG_DRAM_CLK, -#ifdef CONFIG_SUNXI_DRAM_H6_LPDDR3 - .type = SUNXI_DRAM_TYPE_LPDDR3, .ranks = 2, .cols = 11, .rows = 14, +#ifdef CONFIG_SUNXI_DRAM_H6_LPDDR3 + .type = SUNXI_DRAM_TYPE_LPDDR3, + .dx_read_delays = SUN50I_H6_DX_READ_DELAYS, + .dx_write_delays = SUN50I_H6_DX_WRITE_DELAYS, +#elif defined(CONFIG_SUNXI_DRAM_H6_DDR3_1333) + .type = SUNXI_DRAM_TYPE_DDR3, .dx_read_delays = SUN50I_H6_DX_READ_DELAYS, .dx_write_delays = SUN50I_H6_DX_WRITE_DELAYS, #endif |